4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers · FederalPipeline
4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers
Sources Sought from National Aeronautics and Space Administration, solicitation 80GRC025R7012SS. Responses due Apr 29, 2025. NAICS 541715. Listed on SAM.gov.